| PART |
Description |
Maker |
| IXFR180N085 |
Discrete MOSFETs: HiPerFET Power MOSFETS
HiPerFET-TM Power MOSFETs ISOPLUS247-TM (Electrically Isolated Back Surface)
|
IXYS Corporation
|
| IXFR4N100Q |
Discrete MOSFETs: HiPerFET Power MOSFETS
HiPerFET Power MOSFETs ISOPLUS247 (Electrically Isolated Backside)
|
IXYS
|
| IXFH80N10Q IXFT80N10Q |
N-Channel Enhancement Mode HiPerFET Power MOSFET(??ぇ婕???荤┛?靛?00V,瀵奸??甸?5m惟??娌??澧?己??iPerFET???MOSFET)
Discrete MOSFETs: HiPerFET Power MOSFETS
HiPerFET Power MOSFETs Q-Class
|
IXYS Corporation
|
| IXFN26N90 IXFN25N90 IXFN-26N90 IXFN-25N90 |
Discrete MOSFETs: HiPerFET Power MOSFETS
HiPerFETTM Power MOSFETs Single Die MOSFET
HiPerFET Power MOSFETs Single Die MOSFET 25 A, 900 V, 0.33 ohm, N-CHANNEL, Si, POWER, MOSFET
|
http://
IXYS[IXYS Corporation]
IXYS, Corp.
|
| IXFE44N60 |
Discrete MOSFETs: HiPerFET Power MOSFETS
HiPerFET Power MOSFETs Single Die MOSFET
|
IXYS Corporation
|
| IXFH9N80 IXFH8N80 |
HiPerFET Power MOSFETs - N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family
N-Channel Enhancement Mode HiPerFET Power MOSFET(最大漏源击穿电00V,导通电.1Ω的N沟道增强B>HiPerFET功率MOSFET)
Discrete MOSFETs: HiPerFET Power MOSFETS
|
IXYS[IXYS Corporation]
|
| ITE08C06 ITE08F06 |
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 8A I(C) | TO-247AA
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 8A I(C) | TO-220AB 晶体管| IGBT的|正陈| 600V的五（巴西）国际消费电子展| 8A条一（c）| TO - 220AB现有
|
Continental Device India, Ltd.
|
| IXTQ23N60Q |
Discrete MOSFETs: Standard N-channel Types
Power MOSFETs Q-Class
|
IXYS Corporation
|
| IXTH28N50Q IXTT28N50Q |
Discrete MOSFETs: Standard N-channel Types
Power MOSFETs Q-Class
|
International Rectifier
IXYS Corporation
|
| IRFU110 IRFR110 FN3275 |
From old datasheet system
4.7A, 100V, 0.540 Ohm, N-Channel Power MOSFETs
(IRFR110 / IRFU110) N-Channel Power MOSFETs
|
HARRIS SEMICONDUCTOR
Intersil Corporation
|
